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We characterized luminescent properties of InGaN nanodisks in both quantum well and dot regimes. The luminescent efficiency increases as strain is relaxed in the quantum well but peaks at the transition from well to dot.
We present the observation of the strong coupling phenomenon and discrete levels of zero dimensional lower polariton in the hybrid photonic crystal cavity (HPCC). We also report lasing of the HPCC lower polariton ground state.
Site-controlled single photon emitters with emission wavelengths matched to the peak efficiency of silicon single photon detectors were demonstrated using lithographically defined InGaN/GaN quantum dots. A drastic strain-relaxation-induced enhancement of radiative efficiency was observed.
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