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Highly sensitive millimetre-wave detectors based on p-GaAs0.51Sb0.49/i-In0.52Al0.48As/n-InxGa1-xAs backward diodes under zero-bias operation were developed on an InP substrate. Voltage sensitivity of 12300 V/W at 94 GHz was achieved with the GaAsSb-based diode which has a circular mesa with a diameter of 0.9 m. To improve the sensitivity, the indium composition of the n-InxGa1-xAs layer and thickness...
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