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Memory capacitors with the structure of thin tunneling oxide layer/silicon nanocrystal (NC) layer/thick controlling oxide layer were fabricated by both LPCVD method and low energy ion implantation method. The silicon NC formation condition, its size and density which have great influence on silicon NC memory characteristics are experimentally investigated in this paper. Silicon NC memory with a 2V...
Bulge test combined with a refined load-deflection model for long rectangular membrane was applied to determine the mechanical and fracture properties of PECVD silicon nitride (SiNx) thin films. Plane-strain modulus Eps, prestress s0, and fracture strength smax of SiNx thin films deposited both on bare Si substrate and on SiO2-topped Si substrate were extracted. The SiNx thin films on different substrates...
The design and performance of a silicon-based RF detector coil for use in magnetic resonance (MR) spectroscopy applications is described. The coil is fabricated using microelectromechanical systems (MEMS) technology by deep reactive ion etching (DRIE) of an oxidized silicon substrate carrying electroplated conductors. The DRIE step simultaneously forms a sample trough and creates a trepan cut around...
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