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Tunable terahertz (THz) radiation emitted from the triangular mesa structures consisting of the intrinsic Josephson junctions in single-crystalline high-Tc superconducting Bi2Sr2CaCu2O8+δ is investigated using angular distribution measurements of the radiation power and Fourier transform infrared spectroscopy.
40-Gbps transmission over 5-km single-mode fiber using a directly modulated 1.3-μm AlGaInAs MQW distributed-reflector laser was demonstrated. Error-free operations up to 70°C have been achieved.
A 60-GHz injection-locked frequency divider (ILFD) fabricated in 65nm CMOS and operating at 1.2V consumes 1.65mW excluding buffers and biasing circuits, and has a measured locking range of 48.5-62.9GHz (25.9%) with 0dBm input power. The core ILFD area is 0.0157mm2. The large locking range is attributed to the use of the multi-order LC oscillator topology.
1.3-µm-wavelength AlGaInAs distributed reflector lasers were investigated for uncooled high-speed direct modulation. 40-Gbps modulation under low driving current of 50 mA up to 50°C and 40-Gbps eye opening at 85°C are demonstrated.
1.55-mum AlGaInAs semi-insulating buried-heterostructure distributed reflector lasers with 75-mum-long active region achieved very high slope values of relaxation oscillation frequency of 4.5 (25degC) and 3.5 GHz/mA1/2 (85degC), which realized 40-Gbps direct modulation up to 85degC.
High relaxation oscillation frequency of 20.5 GHz and its slope of 3.2 GHz/mA1/2 were obtained by SI-BH 1.3-mum AlGaInAs MQW DFB lasers. Eye-opening up to 50degC was demonstrated as a result of 40-Gb/s direct modulation.
Low-drive-current 10-Gb/s operation at high temperatures was obtained for AlGaInAs buried-heterostructure λ/4-shifted DFB lasers. At 100 °C, fr at Ith + 50 mA was 10.8 GHz and 10-Gb/s modulation was achieved at Imod = 22 mAp-p.
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