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In this work, the overall point of interest is the occurrence of artefacts associated with dry etching processes on InP-based structures. By artefacts we mean creation of defects in the remaining material after etching, defects which might be deleterious to both performance of the photonic devices being fabricated, and reliability/lifetime of these devices. A specific sample structure was defined...
We have developed an epitaxial layer transfer technique for THz devices. Here we report the fabrication and the characterization of a THz photomixer on a silicon substrate. The active part of the photomixer is a low-temperature-grown GaAs mesa which has been transferred and layer bonded onto a Si substrate. The preliminary measurement of the THz signal generated in a photomixing configuration at 0...
We report our investigation on realization of 1.55 mum wavelengths sensitive photomixer based on GaAsSb/InP uni-travelling-carrier photodiode. The epitaxial structure and technological steps are described.
Photomixers that consist in a uni-travelling-carrier photodiode (UTC-PD) integrated with a TEM horn antenna (TEM-HA) have been realized and characterized.
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