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The paper deals with the extraction, from the measurement, of the parameters needed to identify in time domain the hysteretic behavior of the coupling capacitance of through silicon via (TSV). The algorithm is developed in such a way that the equivalent capacitance model can be implemented into standard circuit simulators. Results showing the effect of the hysteresis on the crosstalk among TSV and...
In this work the circuit segmentation approach for the modeling of Through Silicon Vias (TSV) is extended to the presence of time domain non linear phenomena such as depletion and capacitance hysteresis. Results are shown discussing the impact of the voltage bias on the above mentioned non-linear phenomena and their combined impact on crosstalk among TSV and between TSVs and active circuits.
The paper deals with the time domain modeling of the hysteretic behavior of the coupling capacitance from a through silicon via (TSV). The model is developed in such a way that it can be implemented into standard circuit simulators. Results showing the effect of the hysteresis on the electrical performances of the signal channel containing the TSV are shown and discussed.
This paper looksat the impact of consideringthe exact or approximated values for the nonlinear depletion capacitance in a TSV equivalent circuit for transient analysis. Furthermore, the effects of the time variant and nonlinear behavior of the doped bulk silicon substrate on signal propagation and crosstalk are also studied.
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