The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
This work presents an extensive analysis of the analog properties, in particular in terms of noise performance, of MOSFET devices belonging to a 65 nm low power CMOS technology exposed to ionizing radiation. The behavior of the 1/f and white noise terms is studied as a function of the main device parameters before and after exposure to 10 keV X-rays and 60Co γ-rays. The results provide a valuable...
This paper is motivated by the growing interest of the detector and readout electronics community towards silicon-on-insulator CMOS processes. Advanced SOI MOSFETs feature peculiar electrical characteristics impacting their performance with respect to bulk CMOS devices. Here we mainly focus on the study of these effects on the noise parameters of the transistors, using experimental data relevant to...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.