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A method to concurrently and location‐selectively grow dissimilar transition‐metal dichalcogenides (TMDs) is of high importance for next‐generation 2D, nonsilicon electronics. In article number 1900861, Vincent Tung, Lain‐Jong Li, and co‐workers demonstrate that the precise control of transition‐metal‐precursor vapor pressure renders successful lateral and vertical heterojunction growth, as well as...
2D transition metal dichalcogenide (TMD) layered materials are promising for future electronic and optoelectronic applications. The realization of large‐area electronics and circuits strongly relies on wafer‐scale, selective growth of quality 2D TMDs. Here, a scalable method, namely, metal‐guided selective growth (MGSG), is reported. The success of control over the transition‐metal‐precursor vapor...
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