The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
Analytical and finite element models of sub-micron Film Bulk Acoustic Resonator (FBAR) based on GaN are reported. The analytical modelling is based on Mason's model for three composite layer FBAR structure. The numerical modelling shows good agreement with theoretical and experimental results previously obtained on FBAR operating around 6 GHz.
This letter describes the fabrication and the morphological and microwave characterization of film bulk acoustic resonator structures, supported on very thin GaN membranes. We have demonstrated, by employing both white-light profilometry as well as X-ray diffraction, the low deflection and low stress of the GaN membranes supporting the resonator metallization. Using as test structure two FBAR structures...
The aim of this paper is to experimentally demonstrate the applications of carbon nanotubes as microwave and millimeter wave sensors. In this respect, two different sensors are presented. The first sensor is a microwave mass sensor termed as RF nanobalance able to detect 1 ng (10-9 g) of matter. The nanolabalance consists in a GaN membrane bulk acoustic wave resonator covered with a thin film of carbon...
This paper reports on microwave characteristics of micromachined GaN-based thin-film bulk acoustic resonator devices. The 2.2 micron active piezoelectric layer was epitaxially grown on (111)-oriented high-resistivity silicon substrate. Bulk micromachining techniques were used for the release of the resonating GaN membrane structure. S-parameter measurements have shown a fundamental mode resonance...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.