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We experimentally demonstrate a CMOS compatible optical parametric amplifier based on Si7N3 waveguides which are compositionally tailored that the 1550nm wavelength resides within the multi-photon regime, while possessing large nonlinear parameter of 550 W−1/m, 500 times larger than that in Si3N4.
We experimentally demonstrate a sophisticated mid-IR microphotonics platform adopting engineered Si-rich and low-stress silicon nitride (SiNx) thin films where an extensive infrared transparency up to λ = 8.5 µm is achieved. Furthermore, because of the designed low-stress property, the SiNx deposition is able to reach a thickness > 2 µm that significantly reduces mid-IR waveguide loss to less than...
Quantum dot infrared photodetectors have generated significant interest in recent years. They have the potential to outperform quantum well detectors in terms of normal-incidence responsivity and higher operating temperatures. Here, an InGaAs/GaAs dots-in-a-well detector grown by metal-organic chemical vapor deposition is spectrally tuned by rapid thermal annealing under dielectric layers. Four films...
Growth of Au-catalyzed InP nanowires (NWs) by metalorganic chemical vapor deposition (MOCVD) has been studied in the temperature range of 400-510°C and V/III ratio of 44-700. We demonstrate that minimal tapering of InP NWs can be achieved at 400°C and V/III ratio of 350. Zinc-blende (ZB) or wurtzite (WZ) NWs is obtained depending on the growth conditions. 4K microphotoluminescence (μ-PL) studies show...
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