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Recently, we have demonstrated internal net gain with a bandwidth of 80 nm (1500 - 1580 nm) and 1533 nm peak gain of 2.0 dB/cm in Al2O3:Er3+ channel waveguides which were sputtered on silicon substrates and subsequently reactive ion etched. Based on measured spectroscopic parameters, rate-equation simulations predict gain of >20 dB throughout the entire telecom C-band for optimized waveguide lengths...
In this paper we experimentally compare pumping at 977 nm and 1480 nm and the influence on gain in an Al2O3:Er3+ amplifier. We show that significantly higher gain can be achieved when pumping at 977 nm, and a record-high peak gain and gain bandwidth obtains compared to previous results in this material. Al2O3:Er3+ straight channel waveguide amplifiers were fabricated on thermally-oxidized silicon...
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