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Samples of doped and undoped a‐Si:H were deposited at temperatures ranging from 100 ºC to 350 ºC and then submitted to different dehydrogenation temperatures (from 350 ºC to 550 ºC) and times (from 1 h to 4 h). a‐Si:H films were characterised after deposition through the measurements of specific material parameters such as: the optical gap, the conductivity at 25 ºC, the thermal activation energy...
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