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In this work, the effect of the anode electrode-HfO2 interface on unipolar switching for HfO2-based RRAM is systematically investigated. It is found that the switching behavior can be improved not only by changing the anode electrode material (TiN vs. Pt), but also by engineering the anodic interface with thin M or MOx capping layers between the electrode and the HfO2 film, such as Ti or TiO. The...
This work presents a detailed analysis of the ability of high-K materials to recover from plasma damage, as simulated by Fowler-Nordheim stress. Forming gas and high temperature rapid thermal anneal (RTA) steps are compared to determine their efficiency at trap recovery. The annealing responses of the technologically relevant HfSiON and HfO2 materials (EOT<2nm) are correlated with structural differences...
A detailed analysis of the ability of high-k materials to recover from plasma damage, as simulated by Fowler-Nordheim stress is presented. Forming gas and high temperature rapid thermal anneal (RTA) steps are compared to determine their efficiency at trap recovery. The annealing responses of the technologically relevant HfSiON and HfO2 materials (EOT<2nm) are correlated with structural differences...
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