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As silicon photonics continues to gain research and industrial relevance, some of the building blocks in this technology such as modulators and switches still suffer from limitation when it comes to insertion losses and/or extinction ratio. In the past two years we have been investigating a promising new building block for silicon on insulator (SOI) circuits which is based on ultra-thin narrow stripes...
We discuss the use of active and passive InP membrane structures, heterogeneously integrated onto SOI passive circuits, for switching applications such as gating, wavelength conversion and all-optical flip-flopping. Devices include microdisk lasers and resonators, as well as travelling wave structures, in either electrically pumped or unpumped configuration. We also pay some attention to the fabrication...
First ever demonstration of an InP-on-SOI switch for all-optical-packet-switching. The switch has 300/1300psec on/off switching times, >30dB extinction-ratio and no measurable pattern dependence or switch related power penalties up to a bit rate of 40Gb/sec.
We present the first BER results for wavelength conversion at 2.5Gb/s for an InP membrane Micro-Disc-Laser bonded on SOI substrate. Measured BER supports error-free operation when FEC is used. Operation at 10GB/s is also demonstrated.
We have designed, fabricated and characterized an InP-based membrane photodetector on an SOI wafer containing a Si-wiring photonic circuit. New results on RF characterization up to 20 GHz are presented. The detector fabrication is compatible with wafer scale processing steps, guaranteeing compatibility towards future generation electronic IC processing.
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