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The synthesis of highly crystalline Cu2ZnSnSe4 (CZTSe) absorber films through two-stage process of the selenization of a sputtered metallic CZT precursor layers on Mo substrate followed by annealing under selenium vapor was a promising approach for fabricating high efficiency solar cells. In this study, CZTSe films have been characterized in detail using X-ray diffraction (XRD), scanning electron...
We prepared CIGS thin films by pulsed laser deposition (PLD), the pulsewidth of the laser sources are nanosecond(ns) and femtosecond(fs), respectively. We compared their surface morphologies by scanning electron microscopy images. Following, we analyzed their crystal structure utilizing X-ray diffraction, and Raman spectroscopy. Finally, the ultrafast carrier dynamics measured by optical pump-optical...
Precursors of the Cu2ZnSnSe4 (CZTSe) absorber were deposition on Mo/glass substrate by radio-frequency (RF) magnetron sputtering at room temperature. The precursors were converted into CZTSe absorber by annealing in the selenium vapors at the substrate temperature of 550°C. CZTSe films have been characterized in detail using X-ray diffraction (XRD), Raman spectroscopy, photo luminescence (PL), energy...
Surface morphology varies from nanorods to film as the temperature increased, which is result from the difference between surface mobility. From the PL, all the three samples exhibit a localization phenomenon.
In this paper, we report the growth of InN films on sapphire substrate by RF- MOMBE. GaN buffer layer was used to lower the lattice mismatch between InN and sapphire. XRD patterns indicated that the InN films were grown epitaxially along the c-axis direction. In addition, increasing III/V ratio and growth temperature improve the quality of the InN films as well. However, In droplet will appear on...
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