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Surface morphology varies from nanorods to film as the temperature increased, which is result from the difference between surface mobility. From the PL, all the three samples exhibit a localization phenomenon.
In this paper, we report the growth of InN films on sapphire substrate by RF- MOMBE. GaN buffer layer was used to lower the lattice mismatch between InN and sapphire. XRD patterns indicated that the InN films were grown epitaxially along the c-axis direction. In addition, increasing III/V ratio and growth temperature improve the quality of the InN films as well. However, In droplet will appear on...
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