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In this paper, electroless-NiB film was deposited on insulator/Si activated with PdCl2 as the barrier layer to prevent the diffusion of Cu into Si. This was done without any conventional pretreatment as modified by self-assembled monolayer (SAM). The results show that the NiB layer is highly uniform and the defects of the NiB layer is decreases with the increasing deposition time. After annealed at...
In this paper, electroless-NiB film was deposited on insulator/Si activated with PdCl2 as the barrier layer to prevent the diffusion of Cu into Si. This was done without any conventional pretreatment as modified by self-assembled monolayer (SAM). The results show that the NiB layer is highly uniform and the defects of the NiB layer is decreases with the increasing deposition time. After annealed at...
In this study, we used electroless deposition of NiP, NiWP on p-type Si as the barrier layer to prevent the diffusion of Cu into Si. We added different amount of W into the layer, wt% is 11.89% (NiWP-1) and 25.36% (NiWP-2). After annealed at various temperatures, thermal stability of the Si/Ni(W)P/Cu layers were evaluated by measuring the changes of resistance of the samples, using four-point probe...
Electroplating metallization method for crystalline silicon solar cell was investigated with new diffusion barrier layer, Ni, crystalline NiW (c-NiW), amorphous NiW (a-NiW). After annealed at various temperatures, sheet resistance of Ni/Cu, c-NiW/Cu and a-NiW/Cu was measured to observe the Cu diffusion barrier performance. The rapid increase in sheet resistance of Ni/Cu contact indicated that Ni has...
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