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A new crystal of Er3+/Yb3+:Ca9La(VO4)7 was grown successfully by the Czochralski method. Its spectral properties were investigated in detail. The crystal has a strong absorption band near 980nm with a full-width at half-maximum of 33nm, which means that it is very suitable for InGaAs laser diode pumping. Based on the Judd-Ofelt theory, the intensity parameters and radiative lifetime were obtained...
The thermal stability of the oxygen precipitates in Czochralski silicon (Cz-Si) crystal with germanium doping has been investigated with rapid thermal annealing. It was found that the grown-in oxygen precipitates could be dissolved easily in germanium-doped Cz-Si (GCz-Si) than in conventional Cz-Si. After prolonged high-temperature thermal cycle, it was found that the germanium doping inclined to...
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