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We fabricated a unique system in which a semiconductor nanowire and a gold bowtie nanoantenna are combined. InP nanowire is precisely placed in the nanogap of the nanoantenna with a nanomanipulator installed in a focused ion beam system. By measuring the intensity mapping of the photoluminescence from the nanowire, we observed a significantly large enhancement at the antenna gap. We also calculated...
The hot-carrier reliability of S4D MOSFETs was investigated for the first time. The S4D structure offers a large improvement in current degradation as compared with the LDD structure, despite the greater current driving-ability. We estimate that a 0.2 ??m gate length S4D n-MOSFET will operate with good hot-carrier reliability for more than 10 years at a supply voltage of 2 V.
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