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For the first time, growth of high-quality Ge-rich Ge1-xSix (0 ?? ?? ?? 0.14) layers on Ge substrate was demonstrated. An effective suppression of the phosphorus diffusion in Ge1-xSix and a better thermal stability of the nickel germanide on Ge1-xSix were observed. A higher rectifying ratio with a reduced diode leakage current in n+-Ge1-xSix/p-Ge1-xSix is compared with n+-Ge/p-Ge. These results indicate...
This letter addresses mechanisms responsible for a high gate leakage current (Jg) and a thick interfacial layer in the surface channel SiGe pFET enabling transistor fabrication with sub-1-nm equivalent-oxide-thickness (EOT) high-k /metal gate stack. The primary mechanism limiting EOT scaling is Ge-enhanced Si oxidation resulting in a thick (1.4-nm) SiOx interface layer. A secondary mechanism, i.e...
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