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The dynamic on-state resistance (RON) increase in AlGaN/GaN high-electron-mobility transistors (HEMTs) has been investigated by pulsed I–V measurements on devices issued from UMS GaN technology. We have studied the influence of the measurement setup on the pulsed I–V measurements and highlighted the importance of the IDS(t) waveforms to verify the validity of the measurements. The RON is not sensitive...
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