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Double-gate (DG) MOSFET has vast potential in analog circuit applications as a four-terminal device, where the top-gate response may be conveniently tuned via bottom gate bias (Reddy et al., 2005) and (Mathew et al., 2004). This has a number of important implications for circuit design: i) increased functionality out of a given set of devices; ii) reduction of device layout area and parasitics; and...
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