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Unavoidable statistical perturbations inherent in any IC manufacturing process lead to variations in MOSFET device parameters. Circuit performances, being sensitive to these model parameters, also exhibit statistical spreads. A new methodology by which circuit designers can accurately predict circuit worst-case performance limits prior to circuit fabrication is presented. Measured device parameter...
The feasibility of using electroless Nickel deposition for contact hole filling in Si VLSI technology has been demonstrated. The fundamentals of nickel plating are observed in the effects of such variables as temperature, nickel concentration and pH. Three types of electroless nickel solutions have been examined. In the first bath, the reducing agent was Nickel Hypophosphite, in the second, DMAB and...
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