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Hafnium oxide (HfO 2 ) used as the gate insulator of metal-insulator-SiC Schottky-diode hydrogen sensors is annealed in nitrogen at different temperatures and durations for achieving a better performance. The hydrogen-sensing properties of these samples are compared with each other by taking measurements under various temperatures and hydrogen concentrations using a computer-controlled measurement...
A novel metal–insulator-SiC (MISiC) Schottky-diode hydrogen sensor with the interfacial insulator layer grown in oxygen and trichloroethylene (TCE) is fabricated. The sensitivity and response speed of the device are investigated at different temperatures and hydrogen concentrations. The sensor can quickly respond to hydrogen variation and can give significant response even at a low hydrogen concentration...
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