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This paper evaluates the transformer and capacitor coupling used in W-band broadband CMOS power amplifiers. Therefore two four-stage differential power amplifiers were implemented in 40 nm CMOS technology one with transformer coupling and one with capcitor coupling. In order to achieve broadband performance a complex output matching network consisting either of transmission lines and transformer or...
In this paper the design and measurement of a four stage broadband differential power amplifier intended for W-band using 40 nm bulk CMOS is presented. In order to achieve broadband performance a complex output matching network consisting of transmission line elements and transformers is employed. Furthermore capacitive cross-coupling neutralization is introduced to enhance the stability and the small-signal...
The design and characterization of CMOS compatible medium voltage LDMOS transistors are presented. Devices of different sizes were fabricated in a 0.25 μm BiCMOS technology and were characterized in the most important wireless telecommunication bands up to 5.8 GHz using a load/source pull measurement setup. Alternative layouts with regards to device geometry and stabilizing networks were investigated...
Through this work we highlighted and demonstrated the significance of an algorithmic way of design and development of CMOS LNAs at 5 GHz. The systematic design led to very good measured performances of 14 dB gain, 1.78 dB noise figure, 10 dB return loss both at the input and output and a high linearity of-3 dBm of IP3 under 5.4 mW power consumption. These results compare the best performances reported...
A fully integrated broadband push-pull power amplifier (PA) has been developed and fabricated in a 0.25 mum SiGe-HBT technology. Monolithic transformers are used to transform the 50 iquest input/output of the amplifier to the optimum load and source impedances of an efficient push-pull pair. Electromagnetic modeling of the whole chip structure has been carried out in order to optimize the performance...
A two stage bipolar low noise amplifier based on common-emitter configuration is presented in this work. From transistor size scaling to complete two stage integration, various design aspects and issues will be investigated. It will be shown that by following the proposed design methodology, the input as well as the interstage matching of the low noise amplifier (LNA) can be highly simplified without...
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