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This paper evaluates the transformer and capacitor coupling used in W-band broadband CMOS power amplifiers. Therefore two four-stage differential power amplifiers were implemented in 40 nm CMOS technology one with transformer coupling and one with capcitor coupling. In order to achieve broadband performance a complex output matching network consisting either of transmission lines and transformer or...
The design of a 40 GHz voltage-controlled oscillator (VCO) in 90 nm CMOS technology has been presented in this paper. An optimized topology of resonated negative-conductance cell was utilized to relax the serious trade-off in the design of millimeter-wave VCO. From On-wafer measurement results, the fabricated 40 GHz VCO achieves 8.9 % frequency tuning range and −96.7 dBc/Hz phase noise at 1 MHz offset,...
This paper presents a fully integrated 60 GHz two stage power amplifier for wireless applications using common source topology and power combining. The PA is implemented in a 90 nm low power CMOS technology. The output power of the amplifier has been improved with the help of Wilkinson power combining technique. Also the Wilkinson power combiner has been utilized as a part of input and output matching...
A fully integrated 2 stage K-band power amplifier is designed, fabricated and measured. The amplifier is realized utilizing standard 0.18 μm CMOS process. A novel simplified matching and bias network is used in order to reduce the input and output losses and to achieve a high output power and PAE. At 24 GHz, the measured results of the amplifier are, a small-signal power gain of 16.2 dB, a maximum...
A 22 GHz low-noise amplifier (LNA) was designed, fabricated in standard 0.12 μm CMOS technology and measured. The LNA chip achieves a maximum gain of 5.5 dB, a noise figure of 10.3 dB and return losses at in-/output of 15 and 10 dB, respectively. The LNA operates at a supply voltage 1.2 V and consumes a DC-power of just 5.4 mW. To the author best knowledge it is the first cascode implementation in...
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