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A unity-gain GaAs differential amplifier has been realised as a test vehicle for an integrated circuit technology. The design employs one micron gate length MESFETs and double-layer metallisation. Computer simulation has been used to design amplifiers with predicted gains of 10 dB and 100 MHz - 4 GHz bandwidths.
The device presented in this paper is capable of producing a true logarithmic amplifier with phase matching of ?? 4?? over an 80 dB dynamic range at 70 MHz for MTI Radar Systems.
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