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Our theoretical investigation reveals GeSn nMOSFETs to outperform Ge. For the first time, we fabricate nMOSFETs on GeSn and identify interface trap density, poor n-type dopant activation, channel compressive strain to limit performance in our devices. Improvement in surface passivation is achieved by introducing Ge cap on GeSn. Further enhancements in GeSn nMOSFETs can be obtained by employing implant...
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