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This paper presents our recent understanding of metal/graphene contact in terms of intrinsic interface obtained from the comparison between resist-free and conventional EB processes, and discusses future challenges to reduce the contact resistivity.
We have demonstrated very high-k (k~50) HfO2 films for ultra-scaled CMOS application. Higher symmetric crystalline structure enables us to achieve higher-k HfO2. We present a feasible method to obtain sub-nm EOT with very high-k HfO2 under actual process conditions, together with an underlying mechanism.
We have investigated effects of the oxygen doping into TaCx on the effective work function (Phim,eff) in TaCx/SiO2/Si and TaCx/HfO2/Si gate stacks. It has been found for the first time that the threshold voltage (Vth) is tunable within 0.5~0.6V for HfO2 MOSFETs by adjusting the oxygen content within 0~12 at. % in TaCx. Furthermore, it has been shown that unknown oxygen content in TaCx gates is a possible...
This paper discusses a role of the oxygen vacancy in HfO2/ultra-thin (UT) interfacial layer (IL) SiO2 gate stacks, focusing on the VFB roll-off. The metal/top-SiO2/HfO2/UT IL-SiO2/Si gate stacks have been studied. It is found for the first time that the VFB roll-off is eliminated by inserting 1~2 nm top-SiO2 between metal gate and HfO2. This elimination of the VFB roll-off is explained by compensating...
We have experimentally found two different mechanisms characterizing effective work function (Phim,eff) of a gate electrode on Hf-based high-k dielectrics. Interface dipoles induce both positive and negative Phim,eff shifts. The positive shift is almost independent of gate electrode materials, while the negative one is sensitive to Si composition of the gate electrode. Surface densities of the dipoles...
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