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Zinc oxide (ZnO) thin film was grown on semi‐insulating Si substrate using arsine (AsH3) as precursor by atmospheric‐pressure metal‐organic chemical vapor deposition (AP‐MOCVD). In recently reported results, the physical mechanisms for As‐doped ZnO thin films are explained as As substitution for oxygen (AsO) or As substitution for Zn and As combined with two Zn vacancies (AsZn–2VZn). In this study,...
FinFET devices achieving N/P Ion values of 1250/950 uA/um at 100nA/um at 1V, 1300/1000 uA/um with self-heating correction, are demonstrated, using a dual work function gate-first process flow at 100 nm gate pitch and 40 nm fin pitch. Ring-oscillator (RO, FO=3) functionality has been demonstrated, showing excellent Vdd scalability. We have also demonstrated logic scan chain functionality and yield...
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