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The low-frequency noise (LFN) in the subthreshold region of both n- and p-type gate-all-around silicon nanowire transistors (SNWTs) is investigated. The measured drain-current noise spectral density shows that the LFN in this regime can be well described by the mobility-fluctuation model due to the volume-inversion conduction behavior, and the Hooge parameter is extracted. The LFN in the SNWTs with...
In this work the charge-based capacitance measurement (CBCM) method has been extended and calibrated to measure sub-fF level bias-dependent capacitance of single channel silicon nanowire (SNW) transistors. Mixed mode simulations are used to establish the efficacy of the method. Test keys have been carefully designed and fabricated on-chip so that C-V and I-V characteristics are measured on the same...
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