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Formation of ultra shallow junctions (USJ) with sufficiently low resistance in the source/drain extension (SDE) region is necessary for MOSFETs at the 45-nm node and beyond. Several doping technologies, such as plamsa doping, cluster ion implantation and gas cluster ion beam (GCIB) doping have been studied as possible replacements for conventional sub-keV ion implantation. In this work we used GCIB...
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