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In this paper, Al fluoride defects on microchip Al bondpads were studied, which were confirmed to be due to a 12 hours delay prior to NE111 clean process. Failure analysis results and mechanism were discussed. Moreover, a preventive solution of introducing a time link between passivation etch and NE111 clean process was recommended and implemented.
In this paper, an FIB method using progressive multi-cut technique is proposed and it has been applied in failure analysis of wafer fabrication. The application results showed that this method would greatly improve FIB cut success rate, especially for invisible defects. A case study on Vbd ramp up failure after QBD short loop will be presented.
This paper presents the effects of Auger electron spectroscopy on semiconductor device's threshold voltage performance. Bond pads connected to gate of transistors were exposed to different beam energy of 0, 3, 5, 10, 15 and 20 keV for an average of 2.5 minutes. Vt measurements were collected once at pre-exposure and thrice at post-exposure. The evaluation results show that the transistor Vt was impacted...
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