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Northrop Grumman Space Technology (NGST) is developing an advanced heterogeneous integration (AHI) process to integrate III-V semiconductor chiplets on CMOS wafers under the compound semiconductor materials on silicon (COSMOS) DARPA program. The objective of the program is to have a heterogeneous interconnect pitch and length less than 5 um to enable intimate transistor scale integration. This integration...
A wafer-level-packaging technology was used to integrate the 0.1 mum AlSb/InAs HEMT low-noise amplifiers with power amplifiers, switches and phase shifters to form a compact tri-stack transmit/receive module for light-weight and ultralow-power applications. The high manufacturability of AlSb/InAs HEMT receivers operating at 0.9 mW was demonstrated on a tri-stack wafer. This demonstration of manufacturable...
Wafer-scale-assembly (WSA) technology has been developed for compact and light-weight applications at the Northrop Grumman Corporation. To insure successful insertion of WSA hermetic MMICs for military and space applications, high-reliability demonstration is essential. In this study, we performed two-temperature lifetesting to evaluate the reliability performance of WSA hermetic GaAs HEMT MMICs....
This paper presents an ultra-compact W-band 4-bit phase shifter integrated in a 5-layer wafer-scale assembly phased array system. The phase shifter was implemented using a reflective-type circuit topology, consisting of a 3 dB Lange coupler and a pair of reflective loads. GaAs HEMT switches were used for switching the loads to achieve the desired phase shifts. On-wafer measurements of the single-bit...
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