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This paper reports characterization of mechanical properties of single crystal silicon with heavily-codoped boron (B) and germanium (Ge) as dopant impurities. We prepared three types of B and Ge codoped silicon sliced from the different ingot portion. The silicon device for tensile test was fabricated by using two steps of DRIE without high-temperature process up to 1000 °C. The experimental results...
This paper reports the comparison among the results obtained by various types of testing for evaluating fatigue lifetime of silicon specimens, performed in 6 institutions in Japan. The experiment covers a variety of single crystal silicon (SCS) specimens fabricated on the same SOI wafers with 5 μm device layer thickness as well as additional specimens made separately in some institutions. In summary,...
We developed a quasi-static tensile test system that controls environmental conditions, such as pressure, temperature, and surrounding gasses. Using this system, we evaluated the fracture properties of micron- and submicron-thick single-crystal-silicon film under several conditions. The strength of silicon measured in vacuum or helium was slightly higher than that in laboratory air. We measured the...
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