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We have studied a bottom-gate polycrystalline-silicon thin-film transistor (poly-Si TFT) with amorphous-silicon (a-Si) n+ contacts and center-offset gated structure, where intrinsic poly-Si is used in the center-offset region. The fabrication process is compatible with the conventional a-Si TFT with addition of thermal annealing for crystallization of a-Si. The bottom-gate poly-Si TFT with a 5-mum...
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