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We evaluated the limit of scaling bottom electrode contact (BEC) heater size and high resistivity heater to reduce writing current. It was found that the resistivity of heater should be increased for reducing writing current below the heater size of about 50nm without any undesirable increase of resistance of the crystalline state (SET state, Rset). It was shown in the numerical simulations that the...
We studied the inverse staggered thin-film transistor (TFT) with non-laser crystallization of amorphous silicon (a-Si) by metal-induced crystallization through a cap layer (MICC). The inverse staggered n-channel poly-Si TFT with n + a-Si:H source/drain contacts exhibited a field-effect mobility of 34.8cm 2 /Vs, a gate swing of 1.08V/dec. and the minimum off-state current of <1.0×10...
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