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A Class-E tuned CMOS power amplifier (PA) operating in the 60 GHz band is presented. Design, layout, and parasitic modeling considerations to attain high-efficiency millimeter-wave PA operation are discussed. Both single-ended and differential versions of the single-stage PA are implemented in a 32nm SOI CMOS process. Peak power added efficiency of 27% (30%), power gain of 8.8dB (10dB), and saturated...
This paper presents a first order model for RF power of deeply scaled CMOS. The model highlights the role of device on-resistance in determining the maximum RF power. We show excellent agreement between the model and the measured data on 45 nm CMOS devices across a wide range of device widths, under both maximum output power and maximum PAE conditions. The model allows circuit designers to quickly...
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