The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
This paper presents on overview on the microwave small-signal modelling for the GaN HEMT technology. The two approaches contrasted here are: the standard modelling approach based on the equivalent-circuit representation and the behavioural modelling approach based on artificial neural networks. These two approaches are applied to a GaN HEMT device working in a wide range of biases and at different...
This paper deals with the inverse modeling of an on wafer AlGaAs/GaAs HEMT based on DC and microwave measurements. The device employed was first characterized in DC conditions, then the scattering parameters from 0.5 to 50 GHz were measured at maximum transconductance performance. The device was also accurately modeled by means of a linear circuit model. Since no detailed information on the structure...
In this paper the empirical and the look-up table approaches are combined to accurately model a gallium nitride based HEMT on silicon carbide. That solution allows to exploit the advantages of both approaches. The validity of the extracted model is verified by comparing model simulations with DC and microwave measurements.
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.