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Thermal stress is induced by high temperature manufacturing processes, due to the mismatch of Coefficient of Thermal Expansion s (CTE) between silicon, dielectric material and copper. In this paper, thermal stress around Through-Silicon-Vias (TSVs) was discussed using 3D FEA transient method. Stress distributions near a TSV and TSVs array were investigated after dielectric liner deposition, barrier...
In this paper, interfacial failures (delamination and crack) of a MEMS device during humidity reliability testing are described. Three failure mechanisms are identified: thermal/mechanical stress due to the mismatch in the CTE (Coefficient of Thermal Expansion) of different materials. hygroscopic stress due to moisture absorption and swelling of polymer materials characterized by the CME (coefficient...
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