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Heating of silicon substrates featuring different resistivity values by microwave annealing is investigated. The absorption of microwave energy for silicon wafers is found to be consistent with ohmic conduction loss theory. The strongest absorption occurs when the resistivity was around 10 Ω·cm. As the carrier concentration and the conductivity of silicon increase with temperature, the absorption...
Influence of mixing Co on the structural stability of ultra-thin NiPt silicide film is investigated in this paper. Experiments of variation of the total thickness and Ni : Co : Pt ratio of the Ni, Co and Pt mixtures are carefully designed and carried out. Compared with the 6-nm NiPt sample silicide film, films of Ni, Co and Pt mixtures with similar total metal thickness demonstrate ~150 °C higher...
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