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Gamma‐ray irradiation into vertical type n‐channel hexagonal (4H)‐silicon carbide (SiC) metal‐oxide‐semiconductor field effect transistors (MOSFETs) was performed under various gate biases. The threshold voltage for the MOSFETs irradiated with a constant positive gate bias showed a large negative shift, and the shift slightly recovered above 100 kGy. For MOSFETs with non‐ and a negative constant...
In order to develop highly radiation‐tolerant SiC MOSFETs, we investigated the dependence of the gamma‐ray radiation response on the gate oxide thickness and nitridation processes, used for oxide growth and p‐well implantation. SiC MOSFETs with a thick gate oxide (60 nm) showed a rapid decrease in the threshold voltage shift ΔVth of more than 400 kGy, and transitioned to the normally‐on state at...
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