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In this study, we investigated the effects of bias light on the measurement of the external quantum efficiency (EQE) in multi-junction solar cells. The enhanced bias light incident on the upper layer affected the bottom EQE of the triple-junction solar cell. The artifact EQE was minimized under the specific intensity of the bias light. The photocurrent on the lower subcell increased with the excess...
We investigated the measurement technique for the external quantum efficiency (EQE) in triple-junction solar cell. We focused the bias voltage dependence of the EQE signal and the intensity of the incident light to the upper layer. The voltage dependence exhibited several patterns with the quantity of the leak current of the Ge-bottom cell. On the irradiated cells by the low energy proton, the bottom...
We have studied about the artifact EQE on Ge-subcell in triple-junction cells. The aritifact EQE relates to the anomalous behavior. The EQE relation exhibited the linear dependency agans to the artifact. We confirmed that the artifact EQE is affected with the bias voltage or the limitation of the incidence bias-light to GaAs layer. In this study, we tried to introduce these measurement conditions...
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