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Focus of this work is the optimization of growth to achieve high quality laser material for emission at 1.3μm and beyond. GaAs/GaAsN/InGaAsN heterostructures were grown by solid source molecular beam epitaxy. To achieve optimum crystal quality of InGaAsN heterostructures, growth was followed by a high temperature treatment at about 700 o C. The high optical quality of our annealed material...
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