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Single, high energy, high LET, ions impacting on a Floating gate array at grazing or near-grazing angles lead to the creation of long traces of FGs with corrupted information. Every time a FG is crossed by a single ion, it experiences a charge loss which permanently degrades the stored information. If the ion crosses more than one FG, the threshold voltage of all those FGs interested by its track...
Heavy ions typical of the space environment have energies which exceed by orders of magnitude those available at particle accelerators. In this paper we are irradiating state of the art floating gate memories by using a medium energy (SIRAD) and a high energy (RADEF) facilities. The corruption of stored information decreases when increasing ion energy. The proposed model deals with the broader track...
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