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The work reports on an innovative design to improve the scalability of misaligned Double Gate (DG) Tunnel Field Effect Transistor (TFET) for operation as dynamic memory. The design optimization is achieved through use of lateral gap on both edges of back gate (G2) that reduces Band-to-Band Tunneling (BTBT) and enhances Retention Time (RT) by a factor of ∼3. The front gate responsible for read mechanism...
The present work reports on design optimization of Tunnel Field Effect Transistor (TFET) in Silicon-on-Insulator (SOI) technology to function as dynamic memory with improved retention characteristics. The front gate of TFET is aligned at a partial portion of intrinsic region and primarily controls the read mechanism based on band-to-band tunneling (BTBT) while the back gate creates a physical well...
We report a twin gate tunnel field effect transistor-based capacitorless dynamic memory with improved retention characteristics through well-calibrated simulations. The first front gate of the twin gate architecture regulates the read mechanism based on band-to-band tunneling whereas the second front gate creates and maintains a dedicated volume for the charge storage near the drain region. The profound...
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