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In this paper, we examine the current-voltage (IV) and capacitance-voltage (CV) characteristics of self-aligned (SA), planar block oxide (BO) metal-oxide semiconductor field-effect transistors (MOSFETs) using technology computer-aided design (TCAD) tools. For the first time, a comparison of the different types of BO MOSFETs, such as fully depleted silicon-on-insulator (FDSOI) FET with BO (bFDSOI),...
In this paper, a new field-effect transistor (FET), silicon on partial insulator with block oxide (bSPI), is presented. To fabricate this novel device architecture, a sidewall spacer process is also exploited. For bSPIFET, this block oxide can block the most parts of the p-n junction between the substrate and the source/drain (S/D) region; thus, the junction leakage current is reduced dramatically...
We are trying to submit with this paper a new concept concerning the partial silicon-on-insulator (SOI) process, aiming to fabricate the self-aligned pseudo-SOI device structures - (a) the silicon on partial insulator with block oxide FET (bSPIFET), and (b) the partially insulating oxide (PiOX) under source/drain (S/D) (PUSD) partially insulated field-effect transistor (PUSD PiFET) (Yeo et al., 2004)...
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