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This paper presents a non-conventional CMOS device, which is composed of an nMOSFET and a tunneling field effect transistor (TFET) for driver and load. Based on the measurement data of TFET device published, we have for the first time drawn the Q line of the new designed CMOS compared with the conventional CMOS to verify its feasibility. The static power consumption of it can be optimized and reduced...
We present a non-traditional CMOS inverter composed a junctionless (JL) NMOSFET and an N+-N--P transistor which with simple process and high integration density in this paper. In the non-traditional CMOS inverter the JL NMOSFET serves as driver and the N+-N--P transistor serves as load, respectively. Based on the measurement date of the N+-N--P transistor published, we draw the load line of the non-traditional...
What is silicon-on-insulator (SOI)? Why SOI? Because of the excellent short-channel effects (SCEs) immunity, SOI group is generally considered to be a very strong candidate in the end of the CMOS (complementary metal-oxide semiconductor) scaling, as compared to bulk silicon. This paper aims to propose a novel device architecture namely self-aligned (SA) Pi-shaped source/drain ultra-thin SOI MOS field-effect...
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