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The damage produced by implantation of Er ions of 400keV at a fluence of 5×10 15 ions/cm 2 in silicon was investigated by Rutherford backscattering spectrometry with 2.1MeV He 2+ ions with multiple scattering models. It was found that the damage around the Si surface was almost removed after annealing in oxygen and nitrogen atmospheres successively at 1000°C, and only a small...
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