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The transmission spectra at 300, 77, and 7 K of GaN quantum wells using a 220 - 325 GHz electronic source are investigated. Enhanced signals in the transmission spectra - interpreted as preliminary indications of the activation of the OPTTR mechanism - are obtained when a bias voltage is applied to the device. Results can be considered as a relevant step in the development of devices capable to produce...
We evaluate the optical performance of AlGaN/GaN MISFETs as a non-resonant sub-terahertz, room temperature detector. The single-pixel responsivity and the noise equivalent power are determined. The efficiency of the detection is demonstrated by the room temperature imaging of different solutions of acetone in cyclohexane.
Measurements of terahertz resonant emission due to the excitation of plasma waves by an optical beating inside AlGaAs/InGaAs/InP high electron mobility transistors are reported at 300 K and 200 K.
A photomixed laser beam of two 1.55 mum continuous-wave lasers is used for interband photoexcitation in submicron gate length InAlAs/InGaAs transistors. Results show the clear excitation of plasma oscillation modes in the transistor channel. A strong amplification of the optical beating detection in the 0-600 GHz range is observed as a function of drain-source voltage. Numerical results, using hydrodynamic...
The authors report on tunable terahertz resonant detection of two 1.55 mum cw-lasers beating by plasma waves in AlGaAs/InGaAs/InP high-electron-mobility transistor. The fundamental plasma resonant frequency and its odd harmonics can be tuned with the applied gate-voltage in the range 0-600 GHz. Amplification of photoresponse under applied DC drain-source current is demonstrated.
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